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Freescale Semiconductor Technical Data
Document Number: MRF5S21045 Rev. 1, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * N Suffix Indicates Lead - Free Terminations * 200C Capable Plastic Package * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
2170 MHz, 10 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S21045NR1(MR1)
CASE 1484 - 02, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S21045NBR1(MBR1)
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +15 130 0.74 - 65 to +150 200 45 Unit Vdc Vdc W W/C C C W
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 45 W CW Case Temperature 79C, 10 W CW Symbol RJC Value (1,2) 1.35 1.48 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 0.9 -- pF VGS(th) VGS(Q) VDS(on) gfs 2 2 0.2 -- -- 3.8 -- 3.2 3.5 5 0.35 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 13.5 24 -- -- -- 14.5 25.5 - 37 - 39 - 12 16.5 -- - 35 - 37 -9 dB % dBc dBc dB
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 2 RF Device Data Freescale Semiconductor
R1 VBIAS R2 C1 C2 Z6 C3 C4 C5 + C6 VSUPPLY
Z13 R3 Z1 C7 C8 C9 DUT Z8 C10 C11 Z2 Z3 Z4 Z5 Z7 Z12 Z11 Z10 C12 Z9
RF INPUT
RF OUTPUT
C13
C14
C15
Z1, Z9 Z2 Z3 Z4 Z5 Z6
0.250 x 0.080 Microstrip 0.987 x 0.080 Microstrip 0.157 x 0.080 Microstrip 0.375 x 0.080 Microstrip 0.480 x 1.000 Microstrip 0.510 x 0.080 Microstrip
Z7 Z8, Z13 Z10 Z11 Z12 PCB
0.500 x 1.000 Microstrip 0.270 x 0.080 Microstrip 0.789 x 0.080 Microstrip 0.527 x 0.080 Microstrip 0.179 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 1. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
Table 6. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part C1 C2, C3, C7, C12, C13 C4, C5, C14, C15 C6 C8, C10 C9 C11 R1, R2 R3 Description 220 nF Chip Capacitor (1812) 6.8 pF 100B Chip Capacitors 6.8 F Chip Capacitors (1812) 220 F, 63 V Electrolytic Capacitor, Radial 1 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors 10 W, 1/4 W Chip Resistor Part Number 1812Y224KXA 100B6R8CW C4532X5R1H685MT 13668221 100B1R0BW 100B1R5BW 100B0R5BW Manufacturer Vishay - Vitramon ATC TDK Philips ATC ATC ATC
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 RF Device Data Freescale Semiconductor 3
C1 R1 R2
C2
C4 C5
C3 C6
C7
C8
R3 CUT OUT AREA
C9
C10
C11
C12
C13
C14 C15
MRF5S21045N Rev. 0
Figure 2. MRF5S21045NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -10 -13 -16 -19 -22 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -8 -11 -14 -17 -20 IRL, INPUT RETURN LOSS (dB) 800 mA 650 mA 500 mA -50 -60 1 350 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 IRL, INPUT RETURN LOSS (dB) IM3 (dBc), ACPR (dBc) 15.2 15 14.8 Gps, POWER GAIN (dB) 14.6 14.4 14.2 14 13.8 13.6 13.4 2060 IM3 ACPR 2080 2100 2120 2140 2160 2180 2200 IRL Gps VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) D 32 28 24 20 16 -28 -32 -36 -40 -44 2220
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 10 Watts
14.8 14.6 14.4 Gps, POWER GAIN (dB) 14.2 14 13.8 13.6 13.4 13.2 13 2060 IM3 ACPR 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 IRL Gps D VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
46 42 38 34 30 -18 -22 -26 -30 -34 2220
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts
17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 1 IDQ = 800 mA 650 mA 500 mA 350 mA 200 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-10 -20 IDQ = 200 mA -30 -40
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-25 54 -30 -35 -40 -45 -50 -55 -60 0.1 VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1 10 100 5th Order 7th Order Pout, OUTPUT POWER (dBm) 3rd Order P3dB = 48.17 dBm (65.6 W) 52 50 48 46 44 42 28 VDD = 28 Vdc, IDQ = 500 mA Pulsed CW, 5 sec(on), 1 msec(off) Center Frequency = 2140 MHz 30 32 34 36 38 40 P1dB = 47.60 dBm (57.5 W) Ideal
Actual
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) -10 85_C 16 Gps, POWER GAIN (dB) -20 IM3 (dBc), ACPR (dBc) 15 14 17
Figure 8. Pulse CW Output Power versus Input Power
60 -30_C 25_C 85_C 25_C 85_C 40 30 20 10 0 100 D, DRAIN EFFICIENCY (%) TC = -30_C 50
40
30
VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
-30_C D
25_C
IM3 85_C 25_C -30_C
20
TC = -30_C Gps 85_C
85_C -30 25_C ACPR -30_C -40 25_C -50
10
13 VDD = 28 Vdc IDQ = 500 mA f = 2140 MHz 12 11 0.1
0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100
1
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
16
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
14 Gps, POWER GAIN (dB) 32 V 12 28 V 24 V 10 20 V 8 16 V VDD = 12 V 0 10 20 30 40 50 IDQ = 500 mA f = 2140 MHz 60 70 80
6
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS x AMPS2)
108
107
106 90 100
110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ +5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ +10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF
+20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25
3.84 MHz Channel BW
-ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10
+IM3 @ 3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 RF Device Data Freescale Semiconductor 7
Zo = 10
f = 2200 MHz
f = 2000 MHz
Zload f = 2000 MHz
Zsource
f = 2200 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz 2000 2110 2140 2170 2200 Zsource 8.15 - j5.91 7.07 - j7.32 6.28 - j7.71 5.61 - j7.85 4.92 - j7.85 Zload 4.78 - j5.19 4.04 - j4.14 3.81 - j3.69 3.69 - j3.39 3.57 - j3.11
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 8 RF Device Data Freescale Semiconductor
NOTES
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
4X
aaa
M
b1 CA
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 10 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
E5 BOTTOM VIEW
1
2
DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 MRF5S21045NR1(MR1)
STYLE 1: PIN 1. 2. 3. 4. 5.
r1 aaa M C A B
2X
E1
B
A
E2
PIN 5 GATE LEAD DRAIN LEAD
3
D1
4X
D D2 e
4
4X
b1 aaa M C A
E
c1 H A1 A2 7 Y
DATUM PLANE
ZONE J
F
A E3
Y
C
SEATING PLANE
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 E E1 E2 E3 F b1 c1 r1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .600 --- .551 .559 .353 .357 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .063 .068 .106 BSC .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 15.24 --- 14 14.2 8.97 9.07 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 .18 .28 1.60 1.73 2.69 BSC .10
CASE 1484 - 02 ISSUE B TO - 272 WB - 4 MRF5S21045NBR1(MBR1)
STYLE 1: PIN 1. 2. 3. 4. 5.
DRAIN DRAIN GATE GATE SOURCE
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 RF Device Data Freescale Semiconductor 11
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
E3 VIEW Y - Y
NOTE 8
1
2
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MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
Rev. 12 1, 7/2005 Document Number: MRF5S21045
RF Device Data Freescale Semiconductor

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